A、A、RS CINR
B、B、RSRQ
C、C、RSSI
D、D、RSRP
答案:BD
A、A、RS CINR
B、B、RSRQ
C、C、RSSI
D、D、RSRP
答案:BD
A. A、TD-LTE的上下行时隙配置可以根据需要任意配置
B. B、TD-LTE的HARQ过程与LTEFDD完全相同
C. C、TD-LTE和LTEFDD都使用OFDM技术
D. D、TD-LTE的RandomAccess过程与LTEFDD完全相同
A. A、终端版本号
B. B、终端频段能力
C. C、终端功率等级
D. D、终端上行能力终端定位能力终端切换能力
A. A、S_serving< THRESH_2G_low 且 S_non-serving_LTE > THRESH_LTE_low
B. B、S_serving< THRESH_2G_low 且 S_non-serving_LTE < THRESH_LTE_low 且 S_non-serving_LTE > S_serving + H_PRIO
C. C、S_serving> THRESH_2G_low 且 S_non-serving_LTE > THRESH_LTE_low
D. D、S_serving> THRESH_2G_low 且 S_non-serving_LTE < THRESH_LTE_low 且 S_non-serving_LTE > S_serving + H_PRIO
A. A、A频段
B. B、D频段
C. C、E频段
D. D、F频段